MMBD1501/A / 1503/A / 1504/A / 1505/A
?2001 Fairchild Semiconductor Corporation
MMBD1500 series, Rev. B3
Small Signal Diodes
MMBD1501/A / 1503/A / 1504/A / 1505/A
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
MARKING
MMBD1501 11 MMBD1501A A11
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage 200 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature 150
°C
1
2
3
11
3
1
2
SOT-23
Connection Diagrams
1501
3
1503
1504 15053
3
112NC
2
3
21
2
1
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 5.0 μA
200
V
VF
Forward Voltage I
F = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
620
720
800
830
0.87
0.90
720
830
890
930
1.1
1.15
mV
mV
mV
mV
V
V
IR
Reverse Current V
R = 125 V
1.0
nA
VR = 125 V, TA = 150°C
3.0
μA
VR = 180 V
10
nA
5.0
μA
VR = 180 V, TA = 150°C
CT
Total Capacitance
VR = 0, f = 1.0 MHz
4.0 PF
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