MMBD1501/A / 1503/A / 1504/A / 1505/A
?2001 Fairchild Semiconductor Corporation
MMBD1500 series, Rev. B3
Small Signal Diodes
MMBD1501/A / 1503/A / 1504/A / 1505/A
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
MARKING
MMBD1501 11 MMBD1501A A11
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage 200 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature 150
°C
1
2
3
11
3
1
2
SOT-23
Connection Diagrams
1501
3
1503
1504 15053
3
112NC
2
3
21
2
1
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 5.0 μA
200
V
VF
Forward Voltage I
F = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
620
720
800
830
0.87
0.90
720
830
890
930
1.1
1.15
mV
mV
mV
mV
V
V
IR
Reverse Current V
R = 125 V
1.0
nA
VR = 125 V, TA = 150°C
3.0
μA
VR = 180 V
10
nA
5.0
μA
VR = 180 V, TA = 150°C
CT
Total Capacitance
VR = 0, f = 1.0 MHz
4.0 PF
相关PDF资料
MMBD2004SW-7-F DIODE SS SW 250MW 240V SOT23-3
MMBD2004S DIODE SWITCH 240V 350MW SOT23-3
MMBD2835LT1G DIODE SWITCH DUAL 35V SOT23
MMBD2838LT1G DIODE SWITCH DUAL 50V SOT23
MMBD2838 DIODE UFAST HI COND 75V SOT-23
MMBD3004BRM-7 DIODE SW ARRAY 300V 350MW SOT-26
MMBD3004S-7 DIODE SWITCH 300V 350MW SOT23-3
MMBD301LT3 DIODE SCHOTTKY 200MW 30V SOT-23
相关代理商/技术参数
MMBD1504A 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE DUAL SOT-23
MMBD1504A_D87Z 功能描述:整流器 High Cond Lo Leakage RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MMBD1504A_Q 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MMBD1504A-T/R 制造商:Micro Commercial Components (MCC) 功能描述:LOW LEAKAGE DIODE
MMBD1504A-TP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 200V 0.2A 3-Pin SOT-23 T/R
MMBD1504T 功能描述:二极管 - 通用,功率,开关 600mA 180V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD1504-TP 功能描述:二极管 - 通用,功率,开关 600mA 180V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD1505 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel